AO3400

查询AO3400供应商

AO3400 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gat

e charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 specifications). AO3400L is a Green Product ordering option. AO3400 and AO3400L are electrically identical.

Features
VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) < 28m? (VGS = 10V) RDS(ON) < 33m? (VGS = 4.5V) RDS(ON) < 52m? (VGS = 2.5V)

TO-236 (SOT-23) Top View G D S G

D

S

Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation
A

Maximum 30 ±12 5.8 4.9 30 1.4 1 -55 to 150

Units V V A

TA=25°C TA=70°C ID IDM PD TJ, TSTG

TA=70°C

W °C

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead

Symbol
A A

t ≤ 10s Steady-State Steady-State

RθJA RθJL

Typ 65 85 43

Max 90 125 60

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AO3400

Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250?A, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250?A VGS=4.5V, VDS=5V VGS=10V, ID=5.8A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=5A VGS=2.5V, ID=4A gFS VSD IS Forward Transconductance VDS=5V, ID=5A 10 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 0.7 30 22.8 32 27.3 43.3 15 0.71 1 2.5 823 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 99 77 1.2 9.7 VGS=4.5V, VDS=15V, ID=5.8A 1.6 3.1 3.3 VGS=10V, VDS=15V, RL=2.7?, RGEN=3? IF=5A, dI/dt=100A/?s 4.8 26.3 4.1 16 8.9 5 7 40 6 20 12 3.6 12 1030 28 39 33 52 1.1 Min 30 1 5 100 1.4 Typ Max Units V ?A nA V A m? m? m? S V A pF pF pF ? nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/?s

A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80?s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO3400

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 20 10V 3V 16 4.5V 2.5V 12 ID(A) VDS=5V

20

15 ID (A)

10 VGS=2V

8 125°C 25°C

5

4

0 0 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 1 5

0 0 0.5 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 1 3

60 50 RDS(ON) (m?) 40 30 20 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 60 ID=5A RDS(ON) (m?) 50 40 30 20 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C IS (A) 125°C VGS=2.5V Normalized On-Resistance

1.8 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25°C 125°C VGS=10V VGS=2.5V

VGS=4.5V

VGS=10V

Alpha & Omega Semiconductor, Ltd.

AO3400

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1400 VDS=15V ID=5A Capacitance (pF) 1200 1000 800 600 400 Coss Crss Ciss

100.0 TJ(Max)=150°C TA=25°C Power (W) 100?s 1ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms

40

ID (Amps)

RDS(ON) 10.0 limited

TJ(Max)=150°C TA=25°C

30

20

10

0 0.001

0.01

0.1

1

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 ZθJA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1

0.1

PD Ton

T

0.01 0.00001

Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.