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5517f 40MHz to 900MHz Quadrature Demodulator


LT5517 40MHz to 900MHz Quadrature Demodulator

FEATURES
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DESCRIPTIO

RF Input Frequency Range: 40MHz to 900MHz High IIP3: 21dBm at 800

MHz High IIP2: 58dBm at 800MHz I/Q Gain Mismatch: 0.3dB Max I/Q Phase Mismatch: 0.7° Noise Figure: 12.4dB at 800MHz Conversion Gain: 3.3dB at 800MHz Baseband Bandwidth: 130MHz Single Ended, 50? Matched 2XLO Input Shutdown Mode 16-Lead QFN (4mm × 4mm) Package with Exposed Pad

The LT?5517 is a 40MHz to 900MHz quadrature demodulator optimized for high linearity receiver applications where high dynamic range is important. It is suitable for communications receivers where an RF or IF signal is directly converted into I and Q baseband signals with a bandwidth up to 130MHz. The LT5517 incorporates balanced I and Q mixers, LO buffer amplifiers and a precision, broadband quadrature generator derived from an on-chip divide-by-two circuit. The superior linearity and low noise performance of the LT5517 is achieved across its full frequency range. A wellbalanced divide-by-two circuit generates precision quadrature LO carriers to drive the I mixer and the Q mixer. Consequently, the outputs of the I-channel and the Q-channel are well matched in amplitude, and their phases are 90° apart. The LT5517 also provides excellent 50? impedance matching at the 2XLO port across its entire frequency range.
, LTC and LT are registered trademarks of Linear Technology Corporation.

U APPLICATIO S
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Wireless Infrastructure High Linearity Direct Conversion I/Q Receiver High Linearity I/Q Demodulator

TYPICAL APPLICATIO
BPF LNA BPF

5V RF + VCC LT5517 IOUT+ 0° IOUT– LPF VGA RF – 20 0

POUT, IM3, IM2 (dBm/TONE)

DSP QOUT+ ÷2 90° ENABLE EN QOUT–
5517 F01

LPF VGA

2xLO INPUT

2xLO

Figure 1. High Signal-Level I/Q Demodulator for 450MHz Infrastructure Receiver

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I/Q Output Power, IM3, IM2 vs RF Input Power
POUT –20 TA = 25°C P2XLO = –10dBm –40 f2XLO = 1602MHz fRF1 = 799.9MHz fRF2 = 800.1MHz –60 –80 –100 –18 IM3 IM2 –14 –10 –6 –2 RF INPUT POWER (dBm) 2
5517 F01b

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LT5517

ABSOLUTE
(Note 1)

AXI U RATI GS

U W U PACKAGE/ORDER I FOR ATIO
TOP VIEW
QOUT + QOUT – IOUT + IOUT –

VCC

VCC

UF PACKAGE 16-LEAD (4mm × 4mm) PLASTIC QFN EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB TJMAX = 125°C, θJA = 37°C/W

VCC

Power Supply Voltage ............................................ 5.5V Enable Voltage ....................................................0V, VCC 2XLO Voltage (10dBm Equivalent) .......................... ± 1V RF + to RF – Differential Voltage (10dBm Equivalent) ................................................. ± 2V Operating Ambient Temperature ..............–40°C to 85°C Storage Temperature Range ................. – 65°C to 125°C Maximum Junction Temperature .......................... 125°C

EN

AC ELECTRICAL CHARACTERISTICS
PARAMETER RF Frequency Range 2XLO Frequency Range 2XLO Power 2XLO Port Return Loss Conversion Gain Gain Variation vs Temperature Noise Figure Input 3rd Order Intercept Input 2nd Order Intercept Input 1dB Compression Baseband Bandwidth I/Q Gain Mismatch I/Q Phase Mismatch Output Impedance 2XLO to RF Leakage LO to RF Leakage RF to 2XLO Isolation (Note 4) (Note 4) Differential CONDITIONS

TA = 25°C. VCC = 5V, EN = VCC, fRF1 = 799.9MHz, fRF2 = 800.1MHz, f2XLO = 1602MHz, P2XLO = –10dBm, unless otherwise noted. (Notes 2, 3) (Test circuit shown in Figure 2)
MIN TYP 40 to 900 80 to 1800 –15 to 0 Internally Matched to a 50? Source Voltage Gain, Load Impedance = 1k? –40°C to 85°C 2-Tone, –10dBm/Tone, ?f = 200kHz 2-Tone, –10dBm/Tone, ?f = 200kHz 0 20 3.3 0.01 12.4 21 58 10 130 –0.3 –3.5 0.03 0.7 120 –69 –80 63 0.3 3.5 MAX UNITS MHz MHz dBm dB dB dB/°C dB dBm dBm dBm MHz dB deg ? dBm dBm dB

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ORDER PART NUMBER
12 VCC

16 15 14 13 GNDRF 1 RF + 2 RF


LT5517EUF

3

17

11 GND 10 2XLO 9 GND

GNDRF 4 5 6 7 8

UF PART MARKING 5517

Consult LTC Marketing for parts specified with wider operating temperature ranges.

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LT5517

DC ELECTRICAL CHARACTERISTICS
PARAMETER Supply Voltage Supply Current Shutdown Current Turn-On Time Turn-Off Time EN = HIGH (On) EN = LOW (Off) EN Input Current Output DC Offset Voltage (?IOUT+ – IOUT–?, ?QOUT+ – QOUT–?) Output DC Offset Variation vs Temperature VENABLE = 5V EN = LOW (Note 5) (Note 5) CONDITIONS

TA = 25°C. VCC = 5V unless otherwise noted.
MIN 4.5 70 90 0.1 200 300 1.6 1.3 2 0.5 7 30 TYP MAX 5.25 110 20 UNITS V mA ?A ns ns V V ?A mV ?V/°C

fLO = 1602MHz, PLO = –10dBm – 40°C to 85°C

Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Tests are performed as shown in the configuration of Figure 2. Note 3: Specifications over the – 40°C to 85°C temperature range are assured by design, characterization and correlation with statistical process control.

Note 4: Measured at P2XLO = –10dBm and output frequency = 1MHz. Note 5: Turn ON and Turn OFF times are based on rise and fall times of the output baseband voltage with RF input power of –10dBm.

TYPICAL PERFOR A CE CHARACTERISTICS
fRF = 800MHz, P2XLO = –10dBm, unless otherwise noted. (Test circuit shown in Figure 2) Conv Gain, NF, IIP3 vs RF Input Frequency
25 IIP3
TA = 85°C TA = 25°C TA = –40°C

Supply Current vs Supply Voltage
110

GAIN (dB), NF (dB), IIP3 (dBm)

100

SUPPLY CURRENT (mA)

90

15

NF 10

IIP2 (dBm)

80

70

60 4.5

5 4.75 5.25 SUPPLY VOLTAGE (V)

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5517 G01

IIP2 vs RF Input Frequency
80 P2XLO = –10dBm VCC = 5V TA = 25°C

20

P2XLO = –10dBm VCC = 5V TA = 25°C

70

60

50

5

CONV GAIN

40

0
5.5

30 0 100 200 300 400 500 600 700 800 900 RF INPUT FREQUENCY (MHz)
5517 G02

0 100 200 300 400 500 600 700 800 900 RF INPUT FREQUENCY (MHz)
5517 G03

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LT5517 TYPICAL PERFOR A CE CHARACTERISTICS
fRF = 800MHz, P2XLO = –10dBm, unless otherwise noted. (Test circuit shown in Figure 2) I/Q Output Power, IM3 vs RF Input Power
20 0 f2XLO = 1602MHz fRF1 = 799.9MHz VCC = 5V fRF2 = 800.1MHz OUTPUT POWER –20 –40 IM3 –60 –80 –100 –18 TA = 85°C TA = 25°C TA = –40°C –14 –10 –6 –2 RF INPUT POWER (dBm) 2
5517 G04

POUT, IM3 (dBm/TONE)

GAIN MISMATCH (dB)

0.40 0.20 0 –0.20 –0.40 –0.60 –0.80 0 TA = 85°C TA = 25°C TA = –40°C 100 200 300 400 500 600 700 800 900 RF INPUT FREQUENCY (MHz)
5517 G05

PHASE MISMATCH (DEGREE)

Conv Gain, IIP3 vs Supply Voltage
28 24 f2XLO = 1602MHz VCC = 5V fRF1 = 799.9MHz fRF2 = 800.1MHz
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CONV GAIN (dB), IIP3 (dBm)

CONV GAIN (dB), IIP3 (dBm)

20 16 12 8 4 0 4.5

IIP3 TA = 85°C TA = 25°C TA = –40°C CONV GAIN
NF (dB)

4.75

5.25 SUPPLY VOLTAGE (V)

5

IIP2 vs 2XLO Input Power
70 65 60
IIP2 (dBm)

f2XLO = 1602MHz VCC = 5V

TA = 85°C
LO-RF LEAKAGE (dBm)

55 50 45 40 35 30 –15 –12

TA = 25°C TA = –40°C

f2XLO = 1600MHz –80 f2XLO = 800MHz –90

2XLO-RF LEAKAGE (dBm)

–3 –6 2XLO INPUT POWER (dBm)

–9

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5517 G07

I/Q Gain Mismatch vs RF Input Frequency
P2XLO = –10dBm 0.60 fBB = 1MHz VCC = 5V 0.80

I/Q Phase Mismatch vs RF Input Frequency
6 P2XLO = –10dBm fBB = 1MHz 4 VCC = 5V

2 0 –2 –4 –6 0 100 200 300 400 500 600 700 800 900 RF INPUT FREQUENCY (MHz)
5517 G06

TA = 85°C TA = 25°C TA = –40°C

NF vs 2XLO Input Power
TA = 25°C VCC = 5V

Conv Gain, IIP3 vs 2XLO Input Power
24

fRF = 800MHz fRF = 400MHz

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20 16 12 8 4 0 –15 f2XLO = 1602MHz VCC = 5V fRF1 = 799.9MHz fRF2 = 800.1MHz TA = 85°C TA = 25°C TA = –40°C

IIP3

10

fRF = 200MHz fRF = 40MHz

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6

CONV GAIN

5.5

4 –15

–12 –6 –3 –9 2XLO INPUT POWER (dBm)

0
5517 G08

–12 –9 –6 –3 2XLO INPUT POWER (dBm)

0
5517 G09

LO-RF Leakage vs 2XLO Input Power
–60 –70 TA = 25°C VCC = 5V –60 –70 –80 –90

2XLO-RF Leakage vs 2XLO Input Power
TA = 25°C VCC = 5V f2XLO = 1600MHz

f2XLO = 800MHz

–100 –110 f2XLO = 80MHz

–100 –110

f2XLO = 80MHz

0
5517 G10

–120 –15

–12 –9 –6 –3 2XLO INPUT POWER (dBm)

0
5517 G11

–120 –15

–12 –9 –6 –3 2XLO INPUT POWER (dBm)

0
5517 G12

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LT5517 TYPICAL PERFOR A CE CHARACTERISTICS
fRF = 800MHz, P2XLO = –10dBm, unless otherwise noted. (Test circuit shown in Figure 2) RF-LO Isolation vs RF Input Power
120 110
RF-LO ISOLATION (dB)
6

fRF = 40MHz
CONV GAIN (dB)

90 80 fRF = 400MHz 70 fRF = 800MHz 60 TA = 25°C VCC = 5V –10 –5 0 5 10
5517 G13

2

TA = 25°C

TA = 85°C

RETURN LOSS (dB)

100

50 –15

RF INPUT POWER (dBm)

PI FU CTIO S
GNDRF (Pins 1, 4): Ground Pins for RF Termination. These pins are not internally connected, and should be connected to the PCB ground plane for best RF isolation. RF+, RF– (Pins 2, 3): Differential RF Input Pins. These pins are internally biased to 2.30V. These two pins should be DC blocked when connected to ground or other matching components. The inputs can be terminated in a singleended configuration, but differential input drive is preferred for best performance. An external matching network is required for impedance transformation. EN (Pin 5): Enable Pin. When the input voltage is higher than 1.6V, the circuit is completely turned on. When the input voltage is less than 1.3V, the circuit is turned off. VCC (Pins 6, 7, 8, 12): Power Supply Pins. These pins should be decoupled using 1000pF and 0.1?F capacitors. GND (Pins 9, 11): Ground Pins. These pins are internally tied together and to the Exposed Pad. They should be connected to the PCB ground plane. 2XLO (Pin 10): 2XLO Input Pin. This pin is internally biased to 1V. The input signal’s frequency should be twice that of the desired demodulator LO frequency. The pin should be AC coupled with an external DC blocking capacitor. QOUT–, QOUT+ (Pins 13, 14): Differential Baseband Output Pins of the Q-Channel. The internal DC bias voltage is VCC – 0.78V for each pin. IOUT–, IOUT+ (Pins 15, 16): Differential Baseband Output Pins of the I-Channel. The internal DC bias voltage is VCC – 0.78V for each pin. Exposed Pad (Pin 17): Ground Return for the Entire IC. This pin must be soldered to the printed circuit board ground plane.

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Conv Gain vs Baseband Frequency
f2XLO = 1602MHz VCC = 5V TA = –40°C

RF, 2XLO Port Return Loss vs Frequency
0

4

–5

–10 RF –15 LO –20

0

–2

–4 0.1

1 10 100 BASEBAND FREQUENCY (MHz)

1000
5517 G14

–25

0

0.40

1.20 1.60 0.80 FREQUENCY (GHz)

2
5517 G15

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LT5517
BLOCK DIAGRA W
VCC 6 VCC 7 VCC 8 VCC 12 I-MIXER LPF 16 IOUT+ 15 IOUT– ÷2 RF AMP RF + 2 LO BUFFERS RF – 3 90° 0° LPF 14 QOUT+ 13 QOUT– Q-MIXER BIAS 5 EN 9 11 17 10 2XLO
5517 BD

GND GND EXPOSED PAD

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LT5517
TEST CIRCUIT
J3 IOUT– C15 10pF J4 IOUT+ C16 10pF C13 10pF 16 15 14 13
IOUT + IOUT – QOUT + QOUT –

J5 C14 10pF J6 QOUT– QOUT+

J1 RF

R2 0? C10 3.3pF

C1 T1 MABAES0054 1nF 1 2 3 4 C2 1nF RF + RF


GNDRF

VCC GND

12 11 10 9 C11 1nF 17 VCC C12 1nF J2 2XLO

LT5517

2XLO GND
VCC VCC VCC

GNDRF
EN

5

6 EN

7

8

R1 100k

C5 1nF

C3 0.1?F

C4 2.2?F

REFERENCE DESIGNATION C1,C2,C5,C11,C12 C3 C4 C10 C13 TO C16 R1 R2 T1

VALUE 1nF 0.1?F 2.2?F 3.3pF 10pF 100k 0? 1:4

SIZE 0603 0603 0603 0603 0805 0603 0603

PART NUMBER AVX 06033A102JAT1A TAIYO YUDEN EMK107B TAIYO YUDEN JMK107B AVX 06033A3R3KAT2A AVX 08055A100ZAT1A OPTIONAL JUMPER, OPTIONAL M/A COM MABAES0054
5517 F02

Figure 2. Evaluation Circuit Schematic

Figure 3. Component Side Silkscreen of Evaluation Board

Figure 4. Component Side Layout of Evaluation Board

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LT5517

APPLICATIO S I FOR ATIO

The LT5517 is a direct I/Q demodulator targeting high linearity receiver applications. It consists of an RF amplifier, I/Q mixers, a quadrature LO carrier generator and bias circuitry. The RF signal is applied to the inputs of the RF amplifier, and is then demodulated into I-channel and Q-channel baseband signals using precision quadrature LO signals, which are internally generated using a divide-by-two circuit. The demodulated I/Q signals are lowpass filtered internally with a –3dB bandwidth of 130MHz. The differential outputs of the I-channel and Q-channel are well matched in amplitude and their phases are 90° apart across the full frequency range from 40MHz to 900MHz. RF Input Port Differential drive is recommended for the RF inputs as shown in Figure 2. A low loss 1:4 transformer is used on the demonstration board for a wide bandwidth input impedance match and to assure good noise figure and maximum demodulator gain. Single-ended to differential conversion can also be implemented using narrowband L-C circuits to produce the required balanced waveforms at the RF+ and RF– inputs using three discrete elements as shown in Figure 5. Nominal values are listed in Table 1. (In practice, these values should be compensated according to the parasitics of the PCB.) The conversion gain and NF

RF INPUT CS2 3.7pF LSH 15.6nH

Figure 5. RF Input Matching Network at 800MHz

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of the receiver are similar to those of the transformercoupled demo board, because the single-ended to differential conversion has a 1:4 impedance transformation, similar to the transformer.
Table 1. The Component Values of Matching Network LSH, CS1 and CS2
FREQUENCY (MHz) 40 100 200 300 400 500 600 700 800 900 LSH (nH) 437 169 80.8 51.5 37 28.3 22.6 18.5 15.6 13.5 CS1, CS2 (pF) 71.1 28.6 14.3 9.6 7.2 5.8 4.9 4.2 3.7 3.3

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The differential impedance of the RF inputs is listed in Table 2. The RF inputs may also be terminated in a singleended configuration. In this case either the RF+ or the RF– input can be simply AC coupled to a 50? source, while the other RF input is connected to ground with a 1nF capacitor. Note, however, that this will result in degraded conversion gain and noise figure in most cases.

MATCHING NETWORK CS1 3.7pF TO RF+

TO RF–

5517 F05

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LT5517

APPLICATIO S I FOR ATIO
Table 2. RF Input Differential Impedance
FREQUENCY (MHz) 40 100 200 300 400 500 600 700 800 900 DIFFERENTIAL INPUT IMPEDANCE (?) 240.1-j10.3 245.5-j25.9 236.8-j50.0 223.6-j70.5 207.9-j86.3 190.6-j98.1 173.2-j105.8 156.2-j110.2 141.2-j111.8 129.5-j114.5 MAG 0.665 0.664 0.664 0.663 0.662 0.660 0.657 0.655 0.651 0.650

DIFFERENTIAL S11 ANGLE(°) –0.8 –2.5 –5.1 –7.6 –10.2 –12.7 –15.3 –17.9 –20.4 –22.9

2XLO Input Port To ease the interface of the receiver with the external 2XLO input, the 2XLO port is designed with on-chip 50? impedance matching up to 2GHz. The input is internally biased at 1V. A 1nF DC blocking capacitor is required when connected to the external 2XLO source. The 2XLO frequency is required to be twice the desired operating frequency in order for the chip to generate the

J1 RF

5

C10 3.3pF 4

Figure 6. RF Input Equivalent Circuit with External Broadband Matching

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quadrature Local Oscillator (LO) signals for the demodulator. The on-chip divide-by-two circuit delivers wellmatched, quadrature LO carriers to the I mixer and the Q mixer. I-Channel and Q-Channel Outputs Each of the I-channel and Q-channel outputs is internally connected to VCC though a 60? resistor. The output DC bias voltage is VCC – 0.78V. The outputs can be DC coupled or AC coupled to the external loads. The differential output impedance of the demodulator is 120? in parallel with a 10pF internal capacitor, forming a lowpass filter with a –3dB corner frequency at 130MHz. The load impedance, RLOAD, should be larger than 600? to assure full gain. The gain is reduced by 20 ? log(1 + 120?/RLOAD) in dB when the differential output is terminated by RLOAD. For example, the gain is reduced by 6.85dB when each output pin is connected to a 50? load (or 100? differential loads). The output should be taken differentially (or by using differential-to-single-ended conversion) for best RF performance, including NF and IM2. Proper filtering of the unwanted high frequency mixing product is also important to maintain the highest linearity. A convenient
LT5517 VCC T1 MABAES0054 1 2 3 C2 1nF RF


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C1 1nF 2

RF+

250? 3

2.30V

5517 F06

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LT5517

APPLICATIO S I FOR ATIO

approach is to terminate each output with a shunt capacitor. The capacitor value can be optimized depending upon the operating frequency and the specific PCB layout. The phase relationship between the I-channel output signal and the Q-channel output signal is fixed. When the LO input frequency is higher than the RF input frequency, then the Q-channel outputs (QOUT+, QOUT–) lead the I-channel outputs (IOUT+, IOUT–) by 90°. When the LO input frequency is lower than the RF input frequency, then the Q-channel outputs lag the I-channel outputs by 90°. Note that the phase relationship of the Iand Q-channel outputs relative to the LO can vary by 180°, depending on start-up conditions. This is the nature of a frequency divider-based quadrature phase generator.

VCC 60? 60? 60? 60? IOUT+ IOUT– 10pF QOUT
+

Figure 7. I/Q Output Equivalent Circuit

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When AC output coupling is used, the resulting highpass filter’s –3dB roll-off frequency is defined by the R-C constant of the blocking capacitor and RLOAD, assuming RLOAD > 600?. Care should be taken when the demodulator’s outputs are DC coupled to the external load to make sure that the I/Q mixers are biased properly. If the current drain from the outputs exceeds 6mA, there can be significant degradation of the linearity performance. Each output can sink no more than 13mA when connected to an external load with a DC voltage higher than VCC – 0.78V.
16 15 14 13 QOUT– 10pF
5517 F07

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LT5517

PACKAGE DESCRIPTIO

4.35 ± 0.05 2.15 ± 0.05 2.90 ± 0.05 (4 SIDES)

RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS BOTTOM VIEW—EXPOSED PAD 4.00 ± 0.10 (4 SIDES) PIN 1 TOP MARK 1 2.15 ± 0.10 (4-SIDES) 2 0.75 ± 0.05 R = 0.115 TYP 0.55 ± 0.20 15 16

NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. ALL DIMENSIONS ARE IN MILLIMETERS 3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 4. EXPOSED PAD SHALL BE SOLDER PLATED

Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.

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UF Package 16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 ± 0.05 PACKAGE OUTLINE 0.30 ± 0.05 0.65 BSC
(UF) QFN 0503

0.200 REF 0.00 – 0.05

0.30 ± 0.05 0.65 BSC

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LT5517
RELATED PARTS
PART NUMBER Infrastructure LT5511 LT5512 LT5515 LT5516 LT5520 LT5522 High Linearity Upconverting Mixer DC-3GHz High Signal Level Downconverting Mixer 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 600MHz to 2.7GHz High Signal Level Downconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer DC to 3GHz, 21dBm IIP3, Integrated LO Buffer 20dBm IIP3, Integrated LO Quadrature Generator 21.5dBm IIP3, Integrated LO Quadrature Generator 15.9dBm IIP3, Single Ended, 50? Matched RF and LO Ports 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50? Single-Ended RF and LO Ports 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply 44dB Dynamic Range, Temperature Compensated, SC70 Package 36dB Dynamic Range, Low Power Consumption, SC70 Package Precision VOUT Offset Control, Adjustable Gain and Offset 1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain, 8.8MHz Baseband Bandwidth 17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V Supply, –7dB to 56dB Linear Power Gain Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW Multiband GSM/GPRS/EDGE Mobile Phones DESCRIPTION COMMENTS

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Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 q FAX: (408) 434-0507
q

LT/TP 0104 1K ? PRINTED IN USA

www.linear.com

? LINEAR TECHNOLOGY CORPORATION 2004


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