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4 mask explanation(cn)


4 Mask–Y –Y

Manufacturing Department Array Part

2006.05.15
BEIJING BOE Optoelectronics Technology CO., LTD.

Contents

4 Mask Process flow

Gray Tone mask process

4 Mask Process

Line Capacity 变





Photo Resist

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4 Mask Process flow
5 Mask Process 4 Mask Process

Gate Mask

Gate Mask

Active Mask G/T Mask S/D Mask

Via Mask

Via Mask

ITO Mask

ITO Mask

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4 Mask Process flow
5 Mask process flow
Gate
Cleaning Deposition Mask Etch Strip Initial Clean Gate dep Multi dep Gate mask Gate Etch Gate Strip Active mask Active Etch N+ Etch Active Strip S/D Strip Via Strip ITO Strip S/D mask S/D Etch Via Etch ITO Etch Via mask ITO mask

Active
Pre dep clean 2 GI dep

S/D
Pre dep clean 3 S/D dep

Via

ITO
Pre dep clean 5

Via dep

ITO dep

4 Mask process flow
Gate
Cleaning Initial Cleaning

G/T
Pre dep clean 2 GI dep -> Multi dep

Via

ITO
Pre dep clean 5

Deposition

Gate dep Pre dep clean 2 -> S/D dep

Via dep

ITO dep

Mask Etch Strip

Gate mask Gate Etch

G/T mask S/D Etch(wet)

Via mask Via Etch

ITO mask ITO Etch ITO Strip

Act -> Ashing -> S/D -> N+ (dry) Gate Strip Active Strip Via Strip

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Gray Tone mask process

Full Tone Area 8 um Photo Resist

Full Tone Area

Full Tone Area

Gray Tone Area 34.4 %qq q 过

Photo Resist

Photo Resist

Exposure

Exposure

Exposure (160 mJ)

Full Tone Area

Full Tone Area

Full Tone Area

Gray Tone Area

8 um

G/T Thick.

Mask CD = DI CD

≒ 6000

(ex : 160 mJ)

(ex : 55 mJ)

Gray Tone Required TR 决

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Gray Tone mask process
Half Tone Pattern Normal Pattern

Reticle

PR

After Exposure

After Develop

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4 Mask Process

1st SD Wet Etch
Full tone Gray tone PR PR

Active Etch

Gray Tone Ashing

PR

Mo Etch

Channel Etch

PR

PR

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4 Mask Process
4-mask工艺 为 去 G-tone PR,并为 PR, 进 active S/D mask工艺 工艺 S/D pattern

Ashing

S/D line

Ashing

S/D Channel

Ashing

S/D line

Ashing

open

S/D Channel

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Line Capacity 变

5 Mask
12 system/5 layer Photo : 63,500 sh/m 9 system/3 layer Dry etch : 89,200 sh/m

4 Mask
12 system/4 layer

Balance

↑ 22,500 sh/m : 86,000 sh/m 9 system/2 layer (Act,Ashing,S/D,N+ ) : 80,000 sh/m

↓ 9,200 sh/m

Capacity (Array)

63,500 sh/m

80,000 sh/m

↑ 16,500 sh/m

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PVX S/D

Ohmic

a-Si:H(1st & 2nd) ITO

Bulk G-SiNx I G-SiNx

Gate

Glass

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Components of Conventional Positive Photoresist

Photosensitizers : Photosensitive component of the resist materials Resin : Pattern¤

骨架

Solvents : Resin & PAC,Y Coating (Uniformity) Additives : ① Surfactants(coating ② Speed enhancer ③ etc.

果 mura)

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Positive Type Photoresist 构



(8 )

PAC(感光剂) 感光剂 感光
Photo-Sensitizer (Novolak Resin) 高 树

5%

Photo Active Compound

20%

(75%)

75%

加剂 ( 加剂)

ppm~%

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Positive Type Photoresist 构

(PAC)

DNQ (Diazo Naphthoquinone Compound)
O N2
O N2 O N2 O SO2 O O O SO2 N2 SO2 O C

终 PAC 构

(例)

SO3R

Ballast Compound
OH O C OH OH

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Interaction between Resin & PAC

这种 降

应 PAC Resin5 光 会显 。





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显 时 光
DNQ
O



应 这种 AZ coupling 应对显
Novolak Resin
OH





N2 +

CH2 CH3

MOH

n
O N N

OH CH2 CH3

SO3R

n

SO3R
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Azo coupling reaction

PAC

Novolak resin对显 resin对显 光时 光时
Exposed Area
Novolak Resin

(Fast) 强
Dissolving Speed for Alkali Solution

+
Photo Reacted PAC

hv Novolak Resin unexposed Area
Novolak Resin

+
PAC

PAC
(Slow) Zone
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DNQ/Novolak resist chemistry <DNQ

Carbene
O N2
N2
O



应 mechanism>
Ketene
O C

光 Indene carboxylic acid
H

H2O

hv
SO3R
SO3R

COOH

SO3R (Wolff rearrangement)

SO3R

1

2
H

+ Alkaline Developer
1. NaOH 2. (CH3)4NOH (TMAH)
SO3R

H COONa

COO(CH3)4N

+ H2O

SO3R

+ H2O

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