当前位置:首页 >> 机械/仪表 >>

20V P沟道增强型MOSFET(MOS管)


20V P-Channel Enhancement-Mode MOSFET

VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ

XP2301L
3

Features
Adv

anced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements.
2 1

SOT– 23 (TO–236AB)

3

D

▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device G 1 2
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation TA = 25 C TA = 75 C Operating Junction and Storage Temperature Range Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted)
2) o o

S

Symbol VDS VGS ID IDM PD TJ, Tstg RqJC RqJA

Limit -20 ±8 -2.3 -8 0.9 0.57 -55 to 150

Unit V

A

W
o

C

o

C/W

140

Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation 2 2. 1-in 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing

www.ic-jiazhi.com

Tel:400 660 8382

1/7

XP2301L
ELECTRICAL CHARACTERISTICS Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Gate Resistance Forward Transconductance Dynamic
3)

Symbol

Test Condition

Min

Typ

Max

Unit

BVDSS RDS(on) RDS(on) VGS(th) IDSS IGSS Rg gfs

VGS = 0V, ID = -250uA VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A VDS =VGS, ID = -250uA VDS = -9.6V, VGS = 0V VGS = ±8V, VDS = 0V

-20

69 83

100 150 -0.95 -1 ±100

V mΩ mΩ V uA nA Ω

-0.45

VDS = -5V, ID = -4.0A

6.5

S

Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%

Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = -6V, VGS = 0V f = 1.0 MHz VDD = -6V, RL = 6Ω ΙD = ?1Α, VGEN = -4.5V RG = 6Ω VDS = -6V, ID = -2.8A VGS = -4.5V

15.23 5.49 2.74 17.28 3.73 36.05 6.19 882.51 145.54 97.26 pF ns nC

IS VSD IS = -0.75A, VGS = 0V -0.8

-2.4 -1.2

A V

www.ic-jiazhi.com

Tel:400 660 8382

2/7

XP2301L

SOT-23

NOTES:
A L 3 1 V G 2 B S DIM A B C D G H J J K L S V MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60

C D H K

0.037 0.95

0.037 0.95

0.079 2.0 0.035 0.9 0.031 0.8
inches mm

www.ic-jiazhi.com

Tel:400 660 8382

3/7

XP2301L Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes
Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure cavity for the product when sealed with the “peel–back” cover tape. ? Two Reel Sizes Available (7"and 13",) ? SOT–23, SC–70/SOT–323, ? Used for Automatic Pick and Place Feed Systems SC–89, SC–88/SOT–363, SC–88A/SOT–353, ? Minimizes Product Handling SOD–323, SOD-523 in 8 mm Tape ? EIA 481, –1, –2 Use the standard device title and add the required suffix as listed in the option table below (Table 1). Note that the individual reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is one full reel for each line item, and orders are required to be in increments of the single reel quantity.
SOD-323 8 mm SC-59, SC-70, SC-75,SOT-23 8 mm SC-88, SOT-363 T1 Orientation 8 mm SC-88A, SOT-353 T1 Orientation 8 mm

Direction of Feed

Typical Reel Orientations

Table 1. EMBOSSED TAPE AND REEL ORDERING INFORMATION
Package Tape Width (mm) 8 8 8 SC–70/SOT–323 8 8 SC–89 8 SC–88/SOT-363 8 8 8 SC–88A/SOT-353 8 8 8 8 SOD-523 8 330 (13) 10,000 T3 4 4 4 4 330 178 330 178 330 178 330 178 (13) (7) (13) (7) (13) (7) (13) (7) 10,000 T3 3,000 T1 10,000 T3 3,000 T1 10,000 T3 3,000 T1 10,000 T3 3,000 T1 4 4 4 Pitch mm Reel Size mm(inch) 178 330 178 330 178 Devices Per Reel and Minimum Order Quantity (7) (13) (7) (13) (7) Device Suffix 3,000 T1 10,000 T3 3,000 T1 10,000 T3 3,000 T1

SOT–23

SOD-323

www.ic-jiazhi.com

Tel:400 660 8382

4/7

EMBOSSED TAPE AND REEL DATA FOR DISCRETES CARRIER TAPE SPECIFICATIONS

K t Top Cover Tape B1 K0 See Note 1 D

P0

P2

10 Pitches Cumulative Tolerance on Tape ± 0.2mm( ± 0.008’’ )

E A0 F B0 P Embossment Center Lines of Cavity D1 For Components 2.0mm x 1.2mm and Larger W

For Machine Reference Only Including Draft and RADII Concentric Around B0

User Direction of Feed

10

o

R Min Bar Code Label Tape and Components Shall Pass Around Radius “R” Embossed Carrier Bending Radius Without Damage 100 mm (3.937 ’’) Maximum Component Rotation 1 mm Max Typical Component Cavity Center Line

*Top Cover Tape Thickness(t 1 ) 0.10mm (0.004’’ )Max.

Embossment

Tape

Typical Component Center Line

1 mm(.039’’ ) Max 250 mm (9.843’’) Camber (Top View) Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm

DIMENSIONS Tape Size 8mm B1 Max D 1.5+0.1mm - 0.0 (.059+.004’’ - 0.0) D1 E F 3.5 ± 0.05mm (.138±.002’’) 5.5 ± 0.05mm (.217 ± .002’’) 7.5 ± 0.10mm (.295 ± .004’’) 11.5 ± 0.1mm (.453 ± .004’’) K P0 P2 2.0 ± 0.1mm (.079 ± .002’’) RMin TMax 25mm 0.6mm (.98’’) (.024’’) 30mm (1.18’’) WMax 8.3mm (.327’’) 12 ± .30mm (.470 ± .012’’) 16.3mm (.642’’) 24.3mm (.957’’)

4.55mm (.179’’) 8.2mm 12mm (.323’’) 12.1mm 16mm (.476’’) 20.1mm 24mm (.791’’)

1.0Min 1.75 ± 0.1mm (.039’’) (.069±.004) 1.5mmMin (.060’’)

2.4mm Max 4.0 ± 0.1mm (.094’’) (.157 ± .004’’) 6.4mm Max (.252’’) 7.9mm Max (.311’’) 11.9mmMax (.468’’)

Metric dimensions govern - English are in parentheses for reference only. NOTE 1: A 0 , B 0 , and K 0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to.50 mm max., NOTE 2: the component cannot rotate more than 10 o within the determined cavity. NOTE 3: If B1 exceeds 4.2 mm (.165”) for 8 mm embossed tape, the tape may not feed through all tape feeders.

www.ic-jiazhi.com

Tel:400 660 8382

5/7

EMBOSSED TAPE AND REEL DATA FOR DISCRETES
T Max Outside Dimension Measured at Edge 13.0mm ± 0.5mm 1.5mm Min (.512 ±.002’’) (.06’’) A
20.2mm Min (.795’’)

50mm Min (1.969’’)

Full Radius

G Inside Dimension Measured Near Hub

Size 8 mm 12mm 16mm 24 mm

A Max 330mm (12.992’’) 330mm (12.992’’) 360mm (14.173’’) 360mm (14.173’’)

G 8.4mm+1.5mm, -0.0 (.33’’+.059’’, -0.00) 12.4mm+2.0mm, -0.0 (.49 ’’+ .079’’, -0.00) 16.4mm+2.0mm, -0.0 (.646’’+.078’’, -0.00) 24.4mm+2.0mm, -0.0 (.961’’+.070’’, -0.00)

T Max 14.4mm (.56’’) 18.4mm (.72’’) 22.4mm (.882’’) 30.4mm (1.197’’)

Reel Dimensions
Metric Dimensions Govern –– English are in parentheses for reference only

Storage Conditions Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred) Humidity: 30 to 80 RH (40 to 60 is preferred ) Recommended Period: One year after manufacturing (This recommended period is for the soldering condition only. The characteristics and reliabilities of the products are not restricted to this limitation) www.ic-jiazhi.com Tel:400 660 8382

6/7

Shipment Specification

CPN
LABEL LABEL

LABEL 10Reel/Inner Box 30KPCS/Inner Box

Dim(Unit:mm)

195mm*195mm*150mm
10 Reel
3000PCS/Reel 8000PCS/Reel (SOT-723,SOD-723)

80KPCS/Inner Box (SOT-723,SOD-723)

Dim(Unit:mm)

460mm*400mm*420mm

LABEL

MARK

12 Inner Box/Carton 360KPCS/Carton
960KPCS/Carton (SOT-723,SOD-723)

www.ic-jiazhi.com

Tel:400 660 8382

7/7


相关文章:
p沟道mos管工作原理
MOS 管 MOS 管的英文全 称叫 MOSFET(Metal Oxide Semiconductor Field Effect ...MOS 管也有 N 沟道和 P 沟道之分, 而且每一类又分为增强型和耗尽型两种,...
N沟道增强型MOS管的工作原理
N沟道增强型MOS管的工作原理_信息与通信_工程科技_...才会有 图 1.23 MOSFET 晶体管的截面图:NMOS(A)...vGS 增加时,吸引到 P 衬底表面层 的电子就增多,...
N沟道增强型MOS管双向低频开关电路 转
N沟道增强型MOS管双向低频开关电路 转_电子/电路_工程科技_专业资料。N沟道增强...4页 免费 N沟道MOS管P沟道MOS管 10页 2下载券喜欢此文档的还喜欢 (精)...
N沟道MOS管和P沟道MOS管
p 型衬底和两个高浓度 n 扩散区构成的 MOS 管叫作 n 沟道 MOS 管, 该管导通时 在两个高浓度 n 扩散区间形成 n 型导电沟道。n 沟道增强型 MOS ...
MOS管设计要点
MOS 管型号是: N 沟道的增强型 MOS 和 P 沟道增强型 MOS 管, 其 ...公司常用 NMOS 有 IRLML2502(VDS=20V) , 3)大功率 MOS 管 一般来说,针对...
N沟道MOS管的结构及工作原理
与结型场效应管不同,金属-氧化物-半导体场效应管(MOSFET) 的栅极与半导体之间...P 沟道增强型 MOS 管的 箭头方向与上述相反,如图 1(c)所示。 二、N 沟道...
MOS管工作原理及其驱动电路
MOS管工作原理及其驱动电路功率场效应晶体管 MOSFET 技术分类: 电源技术 来源:全...增强型;对于N(P) 沟道器件, 栅极电压大于 (小于) 零时才存在导电沟道, ...
MOSFET相关
但实际应用的只有增强型的 N 沟道 MOS 管增强型P 沟道 MOS 管,所以...的 20V N 沟道器件 SiR440DP, 扩展了其第三代 TrenchFET 功率 MOSFET 系列...
N沟道和P沟道MOS FET开关电路
N 沟道和 P 沟道 MOS FET 开关电路 在电路中常见到使用 MOS FET 场效应管...MOS管开关电路设计知识 2页 免费 MOS管开关电路设计知识 8页 免费 MOSFET管...
MOSFET 的选择与应用
如图1, 为典型的N沟道增强型功率MOSFET的元胞结构...③由于只有电子(P沟道MOS管为空穴)参与导电,通态...最大额定值厂家资料一般标为20V。 4.2影响损耗的...
更多相关标签:
增强型mosfet | n沟道增强型mos管 | 增强型mos管 | mos管增强型和耗尽型 | p沟道增强型mos管 | 增强型mos | 增强型mos 耗尽型mos | n沟道增强型mos管型号 |